Thermally conductive molding compound structure for heat dissipation in semiconductor packages

ABSTRACT

The present disclosure, in some embodiments, relates to a method of forming a semiconductor package. The method may be performed by attaching a first thermal conductivity layer to an upper surface of a first chip, and attaching a second thermal conductivity layer to an upper surface of a second chip. A first support substrate is attached to lower surfaces of the first chip and the second chip. A molding compound is formed over the first support substrate and laterally surrounds the first chip and the second chip. The first support substrate is replaced with a package substrate after forming the molding compound over the first support substrate.

REFERENCE TO RELATED APPLICATIONS

This Application is a Divisional of U.S. application Ser. No.15/966,426, filed on Apr. 30, 2018, which is a Continuation-in-Part ofU.S. application Ser. No. 14/076,487, filed on Nov. 11, 2013 (now U.S.Pat. No. 9,960,099, issued on May 1, 2018). The contents of theabove-referenced Patent Applications are hereby incorporated byreference in their entirety.

BACKGROUND

Poor heat dissipation is a common issue for microelectronics devicepackages. Semiconductor chips, especially those with high thermal designpower (TDP) requirements can result in localized overheating that can bedeleterious to product yield, performance and reliability of theresulting microelectronics device packages. A thermal management device,such as a heat sink, is typically placed on the backside of wafers forheat to be transported through a molding compound encapsulating asurface of the wafer to the surrounding environment. However, themolding compound, which is typically a mixture of an epoxy and a silicafiller, has a low thermal conductivity that is generally in the range of0.6 W/m-K to 0.8 W/m-K. This can make the molding compound a barrier toheat dissipation.

For some processes where the thermal management device is attached tothe wafer, a back-side grinding process is needed to reduce thethickness of the molding compound. However, such grinding process maycause the molding compound to become undone or delaminated from thewafer to which it is attached. Where this has occurred, the edges ofchips of the wafer may be susceptible to cracking, chipping and/orexposed to corrosive environmental influences during a subsequent diecutting process and associated handling.

BRIEF DESCRIPTION OF DRAWINGS

Embodiments of the present disclosure are best understood from thefollowing detailed description when read with the accompanying figures.It is emphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart of a method of fabricating a semiconductorpackage, according to one or more embodiments of the present disclosure.

FIG. 2 is a cross-sectional view of semiconductor packages after wafersingulation, according to one or more embodiments of the presentdisclosure.

FIG. 3 is a cross-sectional view of semiconductor packages after wafersingulation, according to one or more embodiments of the presentdisclosure.

FIG. 4 is a cross-sectional view are semiconductor packages havingdifferent shapes of thermal conductivity layers, according to one ormore embodiments of the present disclosure.

FIGS. 5-8 are cross-sectional views of a portion of a semiconductorpackage at various stages of fabrication according to one or moreembodiments of the present disclosure.

FIGS. 9-11 are cross-sectional views of a portion of a semiconductorpackage at various stages of fabrication according to one or moreembodiments of the present disclosure.

FIGS. 12-16 are cross-sectional views of a portion of a semiconductorpackage at various stages of fabrication according to one or morealternative embodiments of the present disclosure.

DETAILED DESCRIPTION

In the following description, specific details are set forth to providea thorough understanding of embodiments of the present disclosure.However, one having ordinary skill in the art will recognize thatembodiments of the disclosure can be practiced without these specificdetails. In some instances, well-known structures and processes are notdescribed in detail to avoid unnecessarily obscuring embodiments of thepresent disclosure.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present disclosure. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments. It should be appreciated that the followingfigures are not drawn to scale; rather, these figures are intended forillustration.

FIG. 1 is a flowchart of a method 2 of fabricating a semiconductorpackage according to various aspects of the present disclosure.Referring to FIG. 1, the method 2 includes block 4, in which a chip isprovided having a first surface and a second surface. The method 2includes block 6, in which a thermal conductivity layer is formedattached to the first surface of the chip. The thermal conductivitylayer provides a path through which heat generated from the chip isdissipated to the surrounding environment to prevent chip overheating.The method 2 includes block 8, in which a substrate is provided. Thesubstrate is attached to the second surface of the chip. The method 2includes block 10, in which a molding compound is formed above thesubstrate to encapsulate the chip and the thermal conductivity layer.

In some embodiments, additional processes are performed before, during,or after the blocks 4-10 shown in FIG. 1 to complete the fabrication ofthe semiconductor package, but these additional processes are notdiscussed herein in detail for the sake of simplicity.

FIGS. 2-10 are cross-sectional side views of portions of a semiconductorpackage at various stages of fabrication according to one or moreembodiments of the method 2 of FIG. 1. FIGS. 2-10 have been simplifiedfor a better understanding of the inventive concepts of the presentdisclosure. It should be appreciated that the materials, geometries,dimensions, structures, and process parameters described herein areexemplary only, and are not intended to be, and should not be construedto be, limiting. Many alternatives and modifications will be apparent tothose skilled in the art, once informed by the present disclosure.

Referring to FIG. 2, a first chip 100 is provided. First chip 100 is aheat sensitive chip such as a memory chip, logic chip, processor chip,or the like. A thermal conductivity layer 120 is attached to a surfaceof first chip 100 by an optional adhesive layer 110. In someembodiments, the adhesive layer 110 comprises one or more of an adhesivebonding, tape bonding, resin bonding, or other suitable material.

The thermal conductivity layer 120 is attached on top of first chip 100to provide a high degree of heat dissipation by providing a thermal paththrough which thermal energy, or heat that is generated by first chip100, is dissipated to the surrounding environment. The higher thermalconductivity enables the thermal conductivity layer 120 to function asan integrated heat spreader to dissipate heat from first chip 100. Inaddition to thermal management, the thermal conductivity layer 120, insome embodiments, is also configured to provide mechanical supportduring a molding process to minimize shrinkage and/or warping of amolding compound supplied during the molding process. In one or moreembodiments, thermal conductivity layer 120 is capable of being used inan integrated circuit packaging type or technology, including, but notlimited to, wire bonded packages, flip chip molded matrix array packages(FCMMAP), and other packages that couple an integrated circuit die tosecond level interconnects such as a ball grid array, a land grid array,and/or a pin grid array.

In accordance with various embodiments of the present disclosure, thethermal conductivity layer 120 has a thermal conductivity that is highenough to provide sufficient passive cooling for the integrated circuitpackage. For instance, in some embodiments of the present disclosure,the thermal conductivity layer 120 has a thermal conductivity betweenabout 3 W/m-K and about 10 W/m-K. In some embodiments, depending on thespecific materials used in the thermal conductivity layer 120, thethermal conductivity of the thermal conductivity layer 120 is higherthan 10 W/m-K.

In one or more embodiments, the thermal conductivity layer 120 comprisesa metal, such as copper, copper alloy, aluminum, gold or other suitablemetals deposited on first chip 100. In some embodiments, the thermalconductivity layer 120 is deposited on the first chip 100 by anelectrochemical plating (ECP) process and/or a sputtering technique. Inan ECP process, the thermal conductivity layer 120 is, for example,blanket deposited on the first chip 100. In some embodiments, dependingon chip size, chip spacing and the technology employed, the thickness ofthe thermal conductivity layer 120 ranges from about 0.5 microns toabout 300 microns. An exemplary ECP process involves an electroplatingcomposition having current density of about 3 A/cm² to about 60 A/cm².In some embodiments, the plating bath includes any combination of CuSO₄,HCl, H₂SO₄, suppressor(s) and additives. In some embodiments, the ECPsolution is maintained at a temperature of about 20° C. to about 40° C.and a pH in the range of about 1-7. The current density of the ECPsolution is about 3 A/cm² to about 60 A/cm². According to variousembodiments, the ECP process is continued for a specified duration oftime or until the first chip 100 is covered with the thermalconductivity layer 120. In some embodiments, the duration and theintensity of the ECP process are adjustable on demand.

In various embodiments, a sputtering process, such as a coppersputtering process, is used to deposit the thermal conductivity layer120 on first chip 100. Sputtering is also known as physical vapordeposition (PVD). Although a PVD method is capable of forming a copperor copper alloy layer without introducing impurities, PVD typically hasa lower deposition rate than an ECP process.

In one or more embodiments, the thermal conductivity layer 120 isdeposited by chemical vapor deposition (CVD), plasma-enhanced CVD(PECVD), atomic layer deposition (ALD), evaporation, and/or othersuitable processes.

In some embodiments, the thermal conductivity layer 120 is a thermallyconductive adhesive layer that includes a conductive filler materialcomprising one of more of silver (Ag), copper (Cu), gold (Au), aluminum(Al), solder, carbon related materials such as carbon nanotubes, carbonfibers, graphite, combinations of these or other conductive materials.The use of a thermally conductive filler material substantiallyincreases the overall thermal conductivity of the adhesive layer. Carbonnanotubes, for example, used in connection with an adhesive tape typematerial are capable of being arranged in the tape using a variety ofapproaches.

In some embodiments, carbon nanotubes are grown in a generally verticaldirection from a material used in the tape. Catalyst material isarranged where growth is desirable, and a carbon-containing gas isintroduced to the catalyst material. Carbon nanotubes are grownextending generally away from the catalyst material. After growth, thearea around the carbon nanotubes is filled with base material including,for example, one or more adhesives, compliant plastics, and insulativematerial. Surfaces of the tape are arranged with an adhesive, using forexample, an adhesive base material and/or adding an adhesive material atthe surface.

In some embodiments, the thermal conductivity layer 120 comprises avariety of adhesives and/or structures. For example, in embodiments thatinvolve a flexible tape type material, the base material of the thermalconductivity layer 120 is a generally flexible material. In someembodiments, the base material includes one or more of plastics,adhesives, glues, epoxies, polymers, thermoplastics, silicone, grease,oil, resin, and the like.

In some embodiments, the thermal conductivity layer 120 is deposited onthe first chip 100 by one or more of a dispense or blade process. In adispense process, for example, a material of the thermal conductivitylayer 120 is dissolved in a solvent such as, for example IPA, acetone,NMP, or otherwise melted to obtain a viscosity in the range from about1,000 cps to about 10,000 cps. The liquid or melted material of thethermal conductivity layer 120 is placed in a container, such as asyringe which is then squeezed out onto the first chip 100 by applying apushing pressure of about 10 psi to about 500 ps. The material of thethermal conductivity layer 120 is thereafter subjected to a thermalbaking process having a the temperature of about 100° C. to about 150°C. to remove residue solvent and solidify the thermal conductivity layer120 on the first chip 100.

In a blade process, for example, a material of the thermal conductivitylayer 120 is dissolved in a solvent such as, for example IPA, acetone,NMP or other suitable solvent that provides good solubility to obtain aviscosity in the range from about 1,000 cps to about 10,000 cps. Theliquid or melted material of the thermal conductivity layer 120 isplaced in a container that combines with a roller and a solid orflexible metal sheet, for example. Through a rolling process, the rollerlays out the melted material of the thermal conductivity layer 120 ontoa surface of the first chip 100.

In some embodiments, the thermal conductivity layer 120 comprises apolymer material having a conductive filler material. In someembodiments, the conductive filler material is a material having arelatively high thermal conductivity that is compatible with thepolymer. Unlike conventional polymer material, the use of a thermallyconductive filler material substantially increases the overall thermalconductivity of the polymer material. In some embodiments, the thermallyconductive filler material comprises alumina. Alumina has a thermalconductivity that is approximately 30 W/m-K. In some embodiments, theweight percentage of alumina in the polymer material ranges from about30% to about 99%. In one or more embodiments, the weight percentage ofalumina in the polymer material ranges from about 70% to about 95%.Using alumina as the filler material increases the overall thermalconductivity of the thermal conductivity layer 120 to a value that fallswithin the range provided above (i.e., 3 W/m-K to 10 W/m-K). This is asubstantial improvement over the 0.6 W/m-K to 0.8 W/m-K thermalconductivity associated with many polymers.

In some embodiments, alternate filler materials with high thermalconductivity are used in the polymer material in addition to, or as analternative of, alumina. For example, in some embodiments, one or moreof aluminum nitride having a thermal conductivity of around 180 W/m-K,beryllium oxide having a thermal conductivity of around 260 W/m-K,various metallic solids such as aluminum (Al), copper (Cu), silver (Ag),gold (Au), AlN, Al₂O₃, other suitable metals and/or non-metallic solidssuch as diamond, silicon, and silicon carbide, solder materials such astin, lead, copper, antimony, silver, carbon nanotubes, graphite, or thelike are used in the polymer as filler material. In some embodiments, acombination of two or more of the above described filler materials areused as the filler material, such as a combination of two or more ofalumina, aluminum nitride, beryllium oxide, and carbon nanotubes.

One skilled in the art understands that alternate filler materialshaving high thermal conductivities that are not specifically listed heremay be used in accordance with implementations of the presentdisclosure. In at least some embodiments, a filler material having arelatively high thermal conductivity that is compatible with the polymermaterial is used. In some embodiments, the weight percentage of thefiller material in the polymer material may range from 30% to 99%, morepreferably from 70% to 95%.

In some embodiments, thermal conductivity layer 120 is formed by amolding process before being placed on first chip 100. The moldingprocess, in some embodiments, comprises forming the thermal conductivitylayer 120 by supplying a polymer material in a liquid or sheeted form.In various embodiments, to prevent bubbles from forming in a subsequentcompression process, the polymer material subjected to a vacuum processin which a vacuum is pumped down to a value of about 0.01 Torr to about10 Torr. Then in the compression process, the polymer material issubjected to a compression force of about 1 kg/cm² to about 10 kg/cm²for a time of about 1 to about 30 minutes at a temperature from about50° C. to about 200° C. After the compression process, a post mold cure(PMC) process is applied to fully cure the polymer material. In the PMC,the polymer material is subjected to a hot plate or oven, for example ata temperature of about 100° C. to about 200° C. for a process time ofabout 0.1 hour to about 20 hours. Once the molding process is completed,the polymer material forms thermal conductivity layer 120 that isthereafter placed on first chip 100.

In some embodiments, after the thermal conductivity layer 120 is placedon the first chip 100, the thermal conductivity layer 120 and the firstchip 100 are together subjected to a singulation process. The first chip100 is affixed to a dicing tape or a die frame (not shown) where thefirst chip 100 and the thermal conductivity layer 120 are die cut ordiced along cutting lines to separate the package of the first chip 100and the thermal conductivity layer 120 into individual units. Eachindividual unit has a portion of the thermal conductivity layer 120attached to first chip 100 a by adhesive layer 110. In variousembodiments, the individual units are formed by other methods inaddition to or as an alternative of a die cutting process.

FIG. 3 illustrates the thermal conductivity layer 120 being placed ontop of first chip 100 a after singulation, in accordance with one ormore embodiments.

FIG. 4 illustrates individual units having the first chips 100 a and thethermal conductivity layer 120, wherein the thermal conductivity layer120 is formed having different shapes first chips 100 a, according tovarious embodiments.

FIG. 5 is a cross-sectional view of a portion of the semiconductorpackage 125 having thermal conductivity layers 120 formed on first chips100 a at a stage of fabrication according to one or more embodiments ofthe present disclosure. FIG. 5 shows a first substrate 130 a. Thesemiconductor package includes a first substrate 130 a. In someembodiments, the first substrate 130 a is a wafer carrier. Firstsubstrate 130 a has first chips 100 a attached to a surface thereto by asubstrate adhesive layer 510. In some embodiments, the substrateadhesive layer 510 comprises a same material as the adhesive layer 110.In other embodiments, the substrate adhesive layer 510 comprises adifferent material than the adhesive layer 110. Attached to first chips100 a are thermal conductivity layers 120. First substrate 130 a acts asa temporary support substrate or carrier to facilitate wafer handling,transport, and processing. First substrate 130 a comprises a combinationof a silicon substrate, a glass substrate, a polymer substrate, apolymer-based composite substrate, a thick tape, or other suitablematerial. First substrate 130 a, in some embodiments, is a rigid carrierconfigured to reduce wafer warping and/or to prevent wafer breakage thatoften occurs during handling and processing.

In some embodiments, a second chip 100 b is attached to first substrate130 a. Second chip 100 b comprises any of memory chips, RF (radiofrequency) chips, logic chips, or similar chips that are not temperaturesensitive or prone to overheating like first chips 100 a.

A molding compound 140 is formed over first substrate 130 a andencapsulates the thermal conductivity layers 120, first chips 100 a, andsecond chips 100 b. The molding compound 140 is configured to providepackage stiffness, a protective or hermetic cover, shielding, and/orprovide a heat conductive path to prevent chip overheating. Moldingcompound 140 comprises any material such as epoxy, epoxy with thermallyconductive filler materials, organic cylinders, plastic moldingcompound, plastic molding compound with fiber, or other suitablematerial. In some embodiments, molding compound 140 is formed by aspin-on coating process, an injection molding process, and/or the like.

FIG. 6a is a cross-sectional view of the semiconductor package 125,after the molding compound 140 is formed on first substrate 130 a, andthe molding compound 140 is planarized, in accordance with one or moreembodiments. In some embodiments, the molding compound 140 is planarizedby a chemical mechanical polishing (CMP) process, for example.Mechanical grinding processes such as CMP sometimes cause damage to thesemiconductor package 125. Accordingly, in some embodiments, a methodless likely to cause damage such as, for example, wet chemical etching,dry chemical etching, dry polishing, plasma etching, or other suitableetching processes is used to planarize the molding compound 140.

FIG. 6b is a cross-sectional view of the semiconductor package 125having the molding compound 140 formed over first substrate 130 a by asheet lamination process, in accordance with one or more embodiments.Unlike a spin-on coating process, for example, a sheet laminationprocess makes it possible to eliminate backside grinding because theuniformity and film thickness of the sheets is controllable.

FIG. 7 is a cross-sectional view of the semiconductor package 125 in aninverted position, having been flipped following a planarizationprocess, in accordance with one or more embodiments. The semiconductorpackage 125 is flipped over so that the molding compound 140 side of thepackage is bonded to a second substrate 130 b. In some embodiments,second substrate 130 b is a wafer carrier. In some embodiments, thesemiconductor package 125 is released from the first substrate 130 a andthe chip side of the semiconductor package 125 is bonded to a packagesubstrate 150. In other embodiments, the first substrate 130 a remainsattached to the semiconductor package 125 to become the packagesubstrate 150. In some embodiments, package substrate 150 has formedtherein any of several additional microelectronic layers such as RDLs(redistribution layers) and microelectronic materials such as conductormaterials, semiconductor materials, and dielectric materials. In someembodiments, package substrate 150 also includes active and passivedevices (not shown).

FIG. 8 is a cross-sectional view of the semiconductor package 125 havingbeen released from the second substrate 130 b, in accordance with one ormore embodiments. The semiconductor package 125 is mounted onto a board170, such as a printed circuit board (PCB) by electrical connectors 160,such as ball grid array (BGA). In some embodiments, the electricalconnectors 160 comprise lead free solder or the like.

FIG. 9 is a cross-sectional view of a portion of a semiconductor package125 at a stage of fabrication, in accordance with one or moreembodiments. Referring back to FIG. 6a , after forming the moldingcompound 140 over first substrate 130 a, the molding compound 140 isplanarized by a chemical mechanical polishing (CMP) process, for exampleto remove the molding compound 140 to expose the thermal conductivitylayer 120, as shown in FIG. 9. In some embodiments, mechanical grindingprocesses such as CMP often cause damage to the semiconductor package125. Accordingly, in some embodiments, a method less likely to causedamage such as, for example, wet chemical etching, dry chemical etching,dry polishing, plasma etching, or other suitable etching processes isused to planarize the molding compound 140. By exposing thermalconductivity layers 120, heat generated by the chips is directly and/orefficiently dissipated to the ambient or to a heat sink as heat does notneed to go through a molding compound, a barrier to heat dissipation.

FIG. 10 is a cross-sectional view of a portion of the semiconductorpackage 125 having been released from the first semiconductor 130 a, inaccordance with one or more embodiments. The chip side of thesemiconductor package 125 is bonded to the package substrate 150.Package substrate 150 has formed therein any of several additionalmicroelectronic layers such as RDLs (redistribution layers) andmicroelectronic materials such as conductor materials, semiconductormaterials, and dielectric materials. Package substrate 150 alsoincludes, in some embodiments, active and passive devices (not shown). Athermal interface material (TIM) 180 is dispensed on top of the thermalconductivity layer 120, molding compound 140 and second chip 100 b. Insome embodiments, shown in FIG. 11, the thermal conductivity layer 120may have a recess within an upper surface facing the TIM 180, asdescribed above in FIG. 4. In some embodiments (not shown), uppersurfaces of the thermal conductivity layer may have different shapedrecesses and/or a different numbers of recesses over different chips.The different shaped recesses and/or different number of recesses allowsfor different amounts of heat to be dissipated from the different chips.In some embodiments, TIM 180 comprises a thermally conductive andelectrically insulative material, such as an epoxy, like an epoxy mixedwith a metal like silver or gold, a “thermal grease,” a “white grease,”other suitable material, or a combination thereof. In some embodiments,a thermal management device 190 such as a heat sink is placed on the TIM180 to facilitate the dissipation of heat from first chips 100 a andsecond chip 100 b. In some embodiments, the semiconductor package 125 ismounted onto board 170, such as a printed circuit board (PCB) byelectrical connectors 160, such as ball grid array (BGA). In someembodiments, the electrical connectors 160 comprise lead free solder orthe like.

FIGS. 12-16 are cross-sectional views of a portion of a semiconductorpackage at various stages of fabrication according to one or morealternative embodiments of the present disclosure.

FIG. 12 is a cross-sectional view of a portion of the semiconductorpackage 125 having a thermal conductivity layer 120 formed on a firstchip 100 a and a second chip 100 b at a stage of fabrication accordingto one or more embodiments of the present disclosure. The thermalconductivity layer 120 is not formed on a third chip 100 c. Thesemiconductor package 125 includes a first substrate 130 a. The firstsubstrate 130 a has the first chip 100 a, the second chip 100 b, and thethird chip 100 c attached to a surface thereto by a substrate adhesivelayer 510.

The thermal conductivity layer 120 above the first chip 100 a has afirst thickness t₁, while thermal conductivity layer 120 above thesecond chip 100 b has a second thickness t₂ that is different than thefirst thickness t₁. In some embodiments, first thickness t₁ is greaterthan second thickness t₂. In some embodiments, top surfaces of thethermal conductivity layer 120 over the first chip 100 a, the thermalconductivity layer 120 over the second chip 100 b, and the third chip100 c are substantially planar. In other embodiments (not shown), topsurfaces of the thermal conductivity layer 120 over the first chip 100 aand the thermal conductivity layer 120 over the second chip 100 b may behigher (i.e., further from the first substrate 130 a) than a top surfaceof the third chip 100 c. In some embodiments, the adhesive layer 110contacts the second chip 100 b along an interface that is disposed alonga horizontal line that extends through sidewalls of the thermalconductivity layer 120 on the first chip 100 a and sidewalls of thethird chip 100 c.

A molding compound 140 is formed over the first substrate 130 a andencapsulates the thermal conductivity layer 120, the first chip 100 a,the second chip 100 b, and the third chip 100 c. FIG. 13 is across-sectional view of the semiconductor package 125, after the moldingcompound 140 is formed on the first substrate 130 a.

FIG. 14 is a cross-sectional view of the semiconductor package 125 in aninverted position, having been flipped, in accordance with one or moreembodiments. The semiconductor package 125 is flipped over so that themolding compound 140 side of the package is bonded to a second substrate130 b. In some embodiments, the second substrate 130 b is a wafercarrier. In some embodiments, the semiconductor package 125 is releasedfrom the first substrate 130 a and the chip side of the semiconductorpackage 125 is bonded to a package substrate 150. In other embodiments,the first substrate 130 a remains attached to the semiconductor package125 to become the package substrate 150. In some embodiments, packagesubstrate 150 has formed therein any of several additionalmicroelectronic layers such as RDLs (redistribution layers) andmicroelectronic materials such as conductor materials, semiconductormaterials, and dielectric materials.

FIG. 15 is a cross-sectional view of the semiconductor package 125having been released from the second substrate 130 b, in accordance withone or more embodiments. After release of the semiconductor package 125from the second substrate 130 b, the molding compound 140 may beplanarized.

Planarization of the molding compound 140 removes a part of the moldingcompound 140, so as to expose top surfaces of the thermal conductivitylayer 120 directly over the first chip 100 a and the second chip 100 b,and to further expose a top surface of the third chip 100 c. After theplanarization, the thermal conductivity layer 120 directly over thefirst chip 100 a, the thermal conductivity layer 120 directly over thesecond chip 100 b, and the third chip 100 c extend to a top surface ofthe molding compound 140. In some embodiments, a combined height of thefirst chip 100 a and the thermal conductivity layer 120 above the firstchip 100 a is substantially equal to a height of the third chip 100 c.In some embodiments, after planarization is completed, sidewalls ofsecond chip 100 b continuously extend between a bottom of the moldingcompound 140 and a top of the molding compound 140.

In some embodiments, the molding compound 140 is planarized by achemical mechanical polishing (CMP) process, for example. In otherembodiments, the molding compound 140 is planarized by wet chemicaletching, dry chemical etching, dry polishing, plasma etching, or othersuitable etching processes. In some embodiments, the planarizationprocess used to planarize the molding compound 140 may also remove partsof the thermal conductivity layer 120 directly over the first chip 100 aand the second chip 100 b, so that the thermal conductivity layer 120directly over the first chip 100 a, the thermal conductivity layer 120directly over the second chip 100 b, and the third chip 100 c extend toa top surface of the molding compound 140.

FIG. 16 is a cross-sectional view of the semiconductor package 125having been mounted onto a board 170, such as a printed circuit board(PCB) by electrical connectors 160, such as ball grid array (BGA). Insome embodiments, the electrical connectors 160 comprise lead freesolder or the like. The chip side of the semiconductor package 125 isbonded to the package substrate 150. A thermal interface material (TIM)180 is formed to be in physical contact with top surfaces of the thermalconductivity layer 120 directly over the first chip 100 a, the thermalconductivity layer 120 directly over the second chip 100 b, the moldingcompound 140, and the third chip 100 c. In some embodiments, a thermalmanagement device 190 such as a heat sink is placed on the TIM 180 tofacilitate the dissipation of heat from the first chip 100 a, the secondchip 100 b, and the third chip 100 c.

In one or more embodiments, the thermal conductivity layer in asemiconductor package provides a high degree of heat dissipation byproviding a thermal path through which thermal energy, or heat that isgenerated by a chip to be dissipated to the ambient or environment.

In one or more embodiments, use of the thermal conductivity layer allowsheat generated by temperature sensitive chips to be effectively and/orefficiently dissipated to the ambient or to a thermal management deviceto prevent overheating of the chip.

In one or more embodiments, the thermal conductivity layer can functionas a mechanical support during molding to minimize molding compoundshrinkage and/or warpage.

One aspect of this description relates to a method of forming asemiconductor package includes forming a thermal conductivity layer andattaching the thermal conductivity layer to a chip, the chip having afirst surface and a second surface, the thermal conductivity layer beingattached to the first surface of the chip, wherein the thermalconductivity layer is configured to provide a path through which heatgenerated from the chip is dissipated. The method also includesattaching a substrate to the second surface of the chip. The methodfurther includes forming a molding compound above the substrate toencapsulate the chip and the thermal conductivity layer.

Another aspect of this description relates to a semiconductor packagethat includes a chip attached to a first substrate. The semiconductorpackage also includes a thermal conductivity layer attached to the chip,wherein the thermal conductivity layer provides a path through whichheat generated from the chip is dissipated. The semiconductor packagefurther includes a molding compound formed above the first substrate,the molding compound encapsulating the chip and the thermal conductivitylayer.

In the preceding detailed description, specific exemplary embodimentshave been described. It will, however, be apparent to a person ofordinary skill in the art that various modifications, structures,processes, and changes may be made thereto without departing from thebroader spirit and scope of the present disclosure. The specificationand drawings are, accordingly, to be regarded as illustrative and notrestrictive. It is understood that embodiments of the present disclosureare capable of using various other combinations and environments and arecapable of changes or modifications within the scope of the claims andtheir range of equivalents.

What is claimed is:
 1. A method of forming a semiconductor package,comprising: attaching a first thermal conductivity layer to an uppersurface of a first chip; attaching a second thermal conductivity layerto an upper surface of a second chip; attaching a first supportsubstrate to lower surfaces of the first chip and the second chip afterforming the first thermal conductivity layer and the second thermalconductivity layer respectively; forming a molding compound over thefirst support substrate and laterally surrounding the first chip and thesecond chip; and replacing the first support substrate with a packagesubstrate after forming the molding compound over the first supportsubstrate.
 2. The method of claim 1, further comprising: removing a partof the molding compound to expose upper surfaces of the first thermalconductivity layer and the second thermal conductivity layer; andforming a thermal interface material to directly contact the uppersurfaces of the first thermal conductivity layer and the second thermalconductivity layer.
 3. The method of claim 2, further comprising:attaching the first support substrate to a lower surface of a thirdchip, wherein the third chip has a third height that is greater than afirst height of the first chip and a second height of the second chip;and forming the molding compound over the third chip.
 4. The method ofclaim 3, wherein the first height is less than the second height; andwherein the third height is equal to a first sum of the first height anda first thickness of the first thermal conductivity layer and to asecond sum of the second height and a second thickness of the secondthermal conductivity layer.
 5. The method of claim 3, furthercomprising: removing the part of the molding compound to expose an uppersurface of the third chip; and forming the thermal interface material todirectly contact the upper surface of the third chip.
 6. The method ofclaim 1, further comprising: attaching a second support substrate to themolding compound, the molding compound separating the second supportsubstrate from upper surfaces of the first thermal conductivity layerand the second thermal conductivity layer; and replacing the firstsupport substrate with the package substrate, the molding compoundbetween the package substrate and the second support substrate.
 7. Themethod of claim 6, further comprising: removing the second supportsubstrate and a part of the molding compound after replacing the firstsupport substrate with the package substrate.
 8. The method of claim 1,further comprising: forming the first thermal conductivity layer on thefirst chip; and dicing the first chip, after forming the first thermalconductivity layer onto the first chip, to define a plurality of chipscomprising the first chip.
 9. The method of claim 1, wherein the firstthermal conductivity layer has a thickness that varies between outermostsidewalls of the first thermal conductivity layer.
 10. A method offorming a semiconductor package, comprising: attaching a first thermalconductivity layer to a first chip, wherein the first thermalconductivity layer comprises a polymer material having a conductivefiller material; attaching a second thermal conductivity layer to asecond chip; attaching the first chip and the second chip to asubstrate; attaching a third chip to the substrate, the third chiphaving a third height that is greater than a first height of the firstchip and a second height of the second chip, wherein the first height isgreater than the second height; forming a molding compound around thefirst chip, the second chip, and the third chip; and wherein the thirdheight is equal to a first sum of the first height and a first thicknessof the first thermal conductivity layer and to a second sum of thesecond height and a second thickness of the second thermal conductivitylayer.
 11. The method of claim 10, wherein a weight percentage of theconductive filler material is in a range of between 70% to 95%.
 12. Themethod of claim 10, further comprising: attaching the molding compoundto a support substrate; and replacing the substrate with a packagesubstrate, the molding compound between the package substrate and thesupport substrate.
 13. The method of claim 10, further comprising:attaching the substrate to a conductive bump, wherein the moldingcompound covers upper surfaces of the first thermal conductivity layerand the second thermal conductivity layer when attaching the substrateto the conductive bump.
 14. The method of claim 10, further comprising:removing a part of the molding compound to expose upper surfaces of thefirst thermal conductivity layer, the second thermal conductivity layer,and the third chip.
 15. A method of forming a semiconductor package,comprising: attaching a first thermal conductivity layer to a firstchip, wherein the first thermal conductivity layer comprises a polymermaterial having a conductive filler material; attaching a second thermalconductivity layer to a second chip; attaching the first chip and thesecond chip to a substrate; attaching a third chip to the substrate, thethird chip having a height that is equal to a distance between a bottomof the first chip and a top of the first thermal conductivity layer;forming a molding compound around and over the first chip, the secondchip, and the third chip; and removing a part of the molding compound toexpose upper surfaces of the first thermal conductivity layer, thesecond thermal conductivity layer, and the third chip.
 16. The method ofclaim 15, further comprising: forming a thermal interface material ontothe upper surfaces of the first thermal conductivity layer, the secondthermal conductivity layer, and the third chip.
 17. The method of claim16, wherein the thermal interface material continuously extends over themolding compound and the upper surfaces of the first thermalconductivity layer, the second thermal conductivity layer, and the thirdchip.
 18. The method of claim 15, further comprising: attaching a firstside of the molding compound to a second substrate, wherein the firstside of the molding compound opposes a second side of the moldingcompound that is attached to the substrate; removing the substrate fromthe second side of the molding compound; and attaching the second sideof the molding compound to a third substrate, wherein the part of themolding compound is removed after attaching the second side of themolding compound to the third substrate.
 19. The method of claim 15,wherein the first chip has a different height than the second chip. 20.The method of claim 15, wherein the first thermal conductivity layer isformed by way of a molding process followed by a compression process.